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DISCRETE SEMICONDUCTORS
DATA SHEET
BSH301 Dual N-channel enhancement mode MOS transistor
Objective specification 1999 Apr 06
Philips Semiconductors
Objective specification
Dual N-channel enhancement mode MOS transistor
FEATURES * 40 m on-state resistance at 2.5 V gate drive * RDSon rating down to 1.8 V * ESD gate protection. APPLICATIONS * Li-Ion safety switch * Power management. DESCRIPTION Two N-channel enhancement mode MOS transistors in an 8-pin plastic TSSOP8 package. PINNING SOT530 (TSSOP8) PIN 1 2 3 4 5 6 7 8 SYMBOL d1 s1 s1 g1 g2 s2 s2 d1 DESCRIPTION drain 1 source 1 source 1 gate 1 gate 2 source 2 source 2 drain 1
1 4
MAM423
BSH301
8 handbook, halfpage
5
d1 s2 s2
g2
d1 s1 s1
g1
Fig.1 Simplified outline (SOT530) and symbol.
CAUTION The device is supplied in an antistatic package. The gate inputs must be protected against static discharge during transport or handling.
QUICK REFERENCE DATA In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VSD VGS VGSth ID RDSon Ptot Note 1. TS is the temperature at the soldering of the drain lead. PARAMETER drain-source voltage (DC) source-drain diode forward voltage gate-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance total power dissipation VDS = VGS; ID = 1 mA TS = 80 C; note 1 VGS = 2.5 V; ID = 3.5 A TS = 80 C VGD = 0; IS = 1.25 A CONDITIONS - - - 0.4 - - - MIN. 1 8 - 5 0.04 1.75 MAX. 20 V V V V A W UNIT
Full Data Sheet will appear: on WWW (Internet; details in front section/back of this HB/CD-ROM) or updated Loose leaf
1999 Apr 06
2
Philips Semiconductors
Objective specification
Dual N-channel enhancement mode MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per FET VDS VGS ID IDM Ptot drain-source voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation TS = 80 C; note 1 note 2 TS = 80 C; note 3 Tamb = 25 C; note 4 Tamb = 25 C; note 5 Tstg Tj IS ISM Notes 1. TS is the temperature at the soldering point of the drain lead. 2. Pulse width and duty cycle limited by maximum junction temperature. storage temperature operating junction temperature TS = 80 C note 2 - - - - - - - -55 -55 - - 20 8 5 20 1.75 1.85 0.95 +150 +150 PARAMETER CONDITIONS MIN.
BSH301
MAX.
UNIT
V V A A W W W C C
Source-drain diode source current (DC) peak pulsed source current 1.75 7 A A
3. Maximum permissible dissipation per transistor. Both devices may be loaded up to 3.5 W at the same time. 4. Maximum permissible dissipation per transistor. Device mounted on a printed-circuit board with Rth a-tp (ambient to tie-point) of 27.5 C/W. 5. Maximum permissible dissipation per transistor. Device mounted on a printed-circuit board with Rth a-tp (ambient to tie-point) of 90 C/W.
1999 Apr 06
3
Philips Semiconductors
Objective specification
Dual N-channel enhancement mode MOS transistor
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
BSH301
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Apr 06
4
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA63
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
135002/00/01/pp5
Date of release: 1999 Apr 06

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